Memory device having a plurality of low power states

ABSTRACT

A method and memory device of controlling a plurality of low power states are provided. The method includes: entering a low power mode state, in which memory cell rows of the memory device are refreshed and power consumption is lower than in a self-refresh mode state, in response to a low power state entry command; and exiting the low power mode state based on a low power mode exit latency time that is set in a mode register of the memory device or at least one of an alarm signal and a low power mode exit command.

CROSS-REFERENCE TO THE RELATED APPLICATION

This is a continuation application of U.S. application Ser. No.16/939,789, filed Jul. 27, 2020, which is a continuation of U.S.application Ser. No. 15/797,525 filed Oct. 30, 2017, which claimspriority from Korean Patent Application No. 10-2016-0144483, filed onNov. 1, 2016, in the Korean Intellectual Property Office, thedisclosures of which are herein incorporated by reference in theirentireties.

BACKGROUND

Methods and apparatuses consistent with the exemplary embodiments of theinventive concept relate to a memory device, and more particularly, to amemory device maximizing power saving by using a plurality of low powerstates.

A dynamic random access memory (DRAM) is used as a working memory incomputing devices or mobile devices. The working memory provides atemporary storage place for data and programs (or code) to be accessedand executed by a system processor(s). A volatile memory device such asthe DRAM performs a refresh operation to retain data bits storedtherein.

A refresh operation of the DRAM is controlled by a memory controller.The memory controller cyclically accesses data bits of the DRAM byissuing a refresh command. In addition, the DRAM has a self-refresh modefor reducing power consumption. The self-refresh mode allows a refreshoperation to be automatically performed by using an internal counter,and thus, leads to low power consumption. When the DRAM is not accessedfor a long time, a self-refresh mode is performed in response to aself-refresh entry command (SRE) and a self-refresh exit command (SRX)by the memory controller.

If power consumption can be further reduced than in the self-refreshmode even while data bits stored in the DRAM are retained, a mobiledevice including the DRAM would exhibit better performance.

SUMMARY

Exemplary embodiments of the inventive concept provide a method ofcontrolling a power state of a memory device having a plurality of lowpower states.

The exemplary embodiments of the inventive concept also provide theaforementioned memory device having the plurality of low power states.

According to an exemplary embodiment, there is provided a method ofcontrolling a power state of a memory device, the method including:entering a low power mode state, in which memory cell rows of the memorydevice are refreshed and power consumption is lower than in aself-refresh mode state, in response to a low power state entry command;and automatically exiting the low power mode state based on a low powermode exit latency time that is set in a mode register of the memorydevice.

According to an exemplary embodiment, there is provided a method ofcontrolling a power state of a memory device, the method including:entering a low power mode state, in which memory cell rows are refreshedand power consumption is lower than in a self-refresh mode state, inresponse to a low power state entry command; and receiving at least oneof an alarm signal and a low power mode exit command which instruct exitfrom the low power mode state, wherein the low power mode exit commandis received after a low power mode exit latency time elapses, whereinthe low power mode exit latency time is a time period after which thememory device automatically exits the low power mode state, and whereinthe low power mode exit latency time is set in a mode register of thememory device.

According to an exemplary embodiment, there is provided a method ofcontrolling a power state of a memory device, the method including:entering a low power mode state, in which memory cell rows are refreshedand power consumption is lower than in a self-refresh mode state, inresponse to a low power state entry command; receiving a trigger signalinstructing transition from the low power mode state to a self-refreshmode state; and operating in the self-refresh mode state in response tothe trigger signal.

According to an exemplary embodiment, there is provided a memory deviceincluding: a memory cell array comprising memory cell rows; and acontrol logic configured to control a self-refresh mode state in whichthe memory cell rows are refreshed, and a first low power mode state inwhich power consumption is lower than in the self-refresh mode state,wherein the control logic controls entry to the first low power modestate in response to a first low power state entry command, and controlexit from the first low power mode state based on a first low power modeexit latency time set in a mode register of the memory device.

According to an exemplary embodiment, there is provided a memory deviceincluding: a memory cell array comprising memory cells; and a controllogic configured to control entry into and exit from an idle state, afirst low power mode state and a second low power mode state, wherein,in the first and second power mode state, the memory cells arerefreshed, wherein the memory device in the first low power modeconsumes less power than in the idle state and more power than in thesecond low power mode state, and wherein the control logic controlsautomatic exit from the first low power mode state to the idle stateafter a first time period, and automatic exit from the second low powermode state to the idle state after a second time period.

BRIEF DESCRIPTION OF THE DRAWINGS

Exemplary embodiments of the inventive concept will be more clearlyunderstood from the following detailed description taken in conjunctionwith the accompanying drawings, in which:

FIG. 1 illustrates a memory system including a memory device that has aplurality of low power states, according to an exemplary embodiment;

FIG. 2 illustrates an example state diagram of a memory device,according to an exemplary embodiment;

FIG. 3 illustrates an example block diagram of a memory device,according to an exemplary embodiment;

FIG. 4 is a timing diagram of a memory device operating in a low powermode state, according to an exemplary embodiment;

FIG. 5 illustrates a state diagram of a memory device, according to anexemplary embodiment;

FIG. 6 is a timing diagram of a memory device operating in aself-refresh power down mode, according to an embodiment;

FIGS. 7 and 8 are timing diagrams of a memory device operating in a lowpower mode state, according to exemplary embodiments;

FIG. 9 illustrates an example low power state diagram of a memorydevice, according to an exemplary embodiment;

FIG. 10 illustrates an example mode register setting low power mode exitlatency times, according to an exemplary embodiment;

FIG. 11 is a block diagram of an example mobile device, to which amemory device having a plurality of low power states is applied,according to an exemplary embodiment; and

FIG. 12 illustrates an operation concept of a mobile device and acommunication system, in which a memory device having a plurality of lowpower states is mounted, according to an exemplary embodiment.

DETAILED DESCRIPTION OF THE EXEMPLARY EMBODIMENTS

Hereinafter, exemplary embodiments of the inventive concept will bedescribed in detail with reference to the accompanying drawings. Itshould be understood that the inventive concept may be embodied indifferent ways without departing from the spirit and scope of theinventive concept. Therefore, it should be understood that the followingexemplary embodiments are provided for illustration only and are not tobe construed in any way as limiting the inventive concept.

FIG. 1 illustrates a memory system including a memory device that has aplurality of low power states, according to an exemplary embodiment.

Referring to FIG. 1 , a memory system 100 may be connected to andcommunicate with a central processing unit (CPU) 50. The memory system100 may perform at least a write or read operation according to variousinput/output commands received from the CPU 50. In FIG. 1 , the memorysystem 100 generally includes a memory controller 110 and a memorydevice 120.

The memory system 100 may perform write/read operations or other memoryaccess operations in response to commands of the CPU 50. If the CPU 50does not issue any command, the memory system 100 may be in an idlestate. The idle state of the memory system 100 may imply that the memorydevice 120 is in an idle state.

The memory system 100 may determine an operation state of the memorydevice 120 according to a command CMD of the memory controller 110. Thememory device 120 may determine the operation state of the memory device120 by control logic 310 receiving the command CMD.

For example, the memory device 120 may operate in an active mode stateaccording to an active command ACT, operate in a refresh mode stateaccording to a refresh command REF, operate in a deep power down modestate according to a deep power down command DPD, operate in aself-refresh mode state according to a self-refresh entry command SRE,and operate in a low power mode state according to a low power stateentry command LPSE.

The memory device 120 may include a memory cell array, in which aplurality of memory cells are arranged. The control logic 310 maycontrol the self-refresh mode state and the low power mode state torefresh memory cell rows. The control logic 310 may operate or controlthe memory device 120 in the self-refresh mode state by the self-refreshentry command SRE and the self-refresh exit command SRX. The controllogic 310 may control entry to the low power mode state in response tothe low power state entry command LPSE. The control logic 310 maycontrol automatic exit from the low power mode state by a low power modeexit latency time tXP_LPS (FIG. 4 ) set in a mode register, or controlexit from the low power mode state in response to an alarm signal ALRM,a trigger signal TRIG, and/or a low power mode exit command LPSX.

FIG. 2 illustrates an example state diagram of a memory device,according to an exemplary embodiment.

Referring to FIG. 2 , the memory device 120 (FIG. 1 ) may be in one of aplurality of operation mode states. For example, the memory device 120may have a total of six operation mode states including an idle state210, an active mode state 220, a refresh mode state 230, a deep powerdown mode state 240, a self-refresh mode state 250, and a low power modestate 260. In this embodiment, although the six operation mode stateswill be described, the inventive concept is not limited thereto, and thememory device 120 may have various operation mode states depending uponoperations of the memory device 120.

The idle state 210 defines when the memory device 120 does not operate,that is, when the memory device 120 is not accessed. For example, whenthere is no command of the CPU 50 (FIG. 1 ), or when the CPU 50 is in asleep mode, the memory device 120 may be in the idle state 210.

The active mode state 220 represents a state in which the memory device120 is performing a normal operation such as read, write and otheroperations in response to the active command ACT. The active mode state220 is a state in which the memory device 120 exhibits maximum powerconsumption since all circuits in the memory device 120 are enabled.When the normal operation in the active mode state 220 is completed, thememory device 120 may automatically transit to the idle state 210.

The refresh mode state 230 represents an auto-refresh state, in whichthe memory device 120 refreshes memory cell rows of a memory cell arrayin response to the cyclical refresh command REF applied by the memorycontroller 110. In the refresh mode state 230, considering that a clocksignal CK of the memory device 120 is alive and a command of the CPU 50(FIG. 1 ) may be issued to the memory device 120, all circuits may beenabled. Thus, power consumption in the refresh mode state 230 may besubstantially the same as that in the active mode state 220. When arefresh operation in the refresh mode state 230 is completed, the memorydevice 120 may automatically transit to the idle state 210.

The deep power down mode state 240 represents a deep power down state,in which the memory device 120 disables most circuits in the memorydevice 120 in response to the deep power down command DPD. The deeppower down mode state 240 is a state in which the memory device 120exhibits minimum power consumption. In response to a wake-up commandWAKE-UP, the memory device 120 may enable the circuits, which have beendisabled in the deep power down mode state 240, and may transit to theidle state 210.

The self-refresh mode state 250 represents a self-refresh state, inwhich the memory device 120 refreshes the memory cell rows of the memorycell array in response to the self-refresh entry command SRE. Theself-refresh entry command SRE may be issued by the memory controller110 (FIG. 1 ) in order to reduce the power consumption of the memorydevice 120, when a certain time period elapses while the memory device120 is in the idle state 210.

In the self-refresh mode state 250, among the circuits in the memorydevice 120, circuits directly and indirectly related to a self-refreshoperation may be enabled, and the other circuits may be disabled. Forexample, in the self-refresh mode state 250, a clock buffer receivingthe clock signal CK from the memory controller 110 may be disabled. Inthe self-refresh mode state 250, a refresh operation may be performed byusing an internal counter (not shown) while the clock signal CK isdisabled. Thus, power consumption in the self-refresh mode state 250 maybe lower than that in the active mode state 220 and the refresh modestate 230 in which all of the circuits may be enabled. The memory device120 may exit the self-refresh mode state 250 in response to theself-refresh exit command SRX which may be issued by the memorycontroller 110.

The low power mode state 260 represents a low power down state, in whichpower consumption is lower than in the self-refresh mode state 250although the memory cell rows of the memory cell array are refreshedlike in the self-refresh mode state 250. The memory device 120 maytransit from the self-refresh mode state 250 to the low power mode state260 in response to the low power state entry command LPSE. In addition,the memory device 120 may transit from the idle state 210 to the lowpower mode state 260 in response to the low power state entry commandLPSE.

In the low power mode state 260, among the circuits in the memory device120, only circuits directly related to the self-refresh operation areenabled, and the other circuits may be disabled. For example, in the lowpower mode state 260, only circuits related to the internal counter,among the circuits enabled in the self-refresh mode state 250, may beenabled. Thus, since the low power mode state 260 controls more circuitsto be disabled than the self-refresh mode state 250, power consumptionin the low power mode state 260 may be further reduced than in theself-refresh mode state 250.

When the self-refresh operation in the low power mode state 260 iscompleted, the memory device 120 may automatically transit to the idlestate 210. Here, the memory device 120 may automatically exit the lowpower mode state 260 according to the low power mode exit latency timetXP_LPS set in a mode register 312 (FIG. 3 ). The low power mode exitlatency time tXP_LPS is a time period that is set so that there is noinfluence on the normal operation or the idle state of the memory device120 by controlling the memory device 120 to exit the low power downstate early enough. The memory device 120 may receive a valid commandafter the low power mode exit latency time tXP_LPS elapses, by using theinternal counter or a separate counter (not shown).

According to an exemplary embodiment, the memory device 120 may exit thelow power mode state 260 by an alarm signal ALRM2 (FIG. 5 ) set in aspecific pin (PINC) of the memory device 120. For example, the memorydevice 120 may exit the low power mode state 260 by the alarm signalALRM2 which is enabled by the specific pin (PINC) earlier as much as thelow power mode exit latency time tXP_LPS than a time point at which thelow power mode exit command LPSX is applied.

For example, the low power mode exit latency time tXP-LPS may be longerthan a self-refresh exit latency time tXP. Since more circuits aredisabled in the low power mode state 260 than in the self-refresh modestate 250, it may take more time to enable the circuits disabled in thelow power mode state 260. Thus, the low power mode exit latency timetXP-LPS may be relatively long.

FIG. 3 illustrates an example block diagram of a memory device,according to an exemplary embodiment.

Referring to FIG. 3 , the memory device 120 (FIG. 1 ) may include aclock buffer 302, a command/address receiver 304, a clock enablereceiver 306, a chip selection receiver 308, a data input/output buffer309, control logic 310, a memory cell array 320, and first to fourthcircuitries 330 to 360.

The clock buffer 302 may receive the clock signal CK from the memorycontroller 110 (FIG. 1 ) and generate an internal clock signal ICK. Theclock signal CK, together with an inverted clock signal CKB, may beprovided as a continuously alternately inverted signal. A pair of clocksignals CK and CKB may improve timing accuracy since rising/fallingedges may be detected with reference to an intersection point thereof.

The command/address receiver 304 may receive command/address signals CAfrom the memory controller 110, and may provide the receivedcommand/address signals CA to the control logic 310 in response to theinternal clock signal ICK. The command/address signals CA may includecommands and address signals. The command/address signals CA may bedistinguished into commands and address signals by the control logic310.

The clock enable receiver 306 may receive a clock enable signal CKE, andmay provide the received clock enable signal CKE to the control logic310 in response to the internal clock signal ICK. The clock enablesignal CKE may be used as a pseudo command set to logic low, when thememory device 120 enters a power down mode. For example, transition froma self-refresh mode, e.g., the self-refresh mode state 250, to aself-refresh power down mode, e.g., a self-refresh power down mode state255 (FIG. 5 ), may be performed by the logic low of the clock enablesignal CKE.

The chip selection receiver 308 may receive a chip selection signal/CS,and may provide the received chip selection signal/CS to the controllogic 310 in response to the internal clock signal ICK.

The data input/output buffer 309 buffers data input to and output fromthe memory device 120. In a read operation, the data input/output buffer309 outputs read data, which is received from the memory cell array 320through, selectively, at least one of the first to fourth circuitries330 to 360, to a data input/output terminal DQ. In a write operation,the data input/output buffer 309 may buffer write data received throughthe data input/output terminal DQ, and may provide the write data to thememory cell array 320 through, selectively, at least one of the first tofourth circuitries 330 to 360.

The control logic 310 may determine operation modes set according to thechip selection signal/CS, the clock enable signal CKE, thecommand/address signals CA, and combinations thereof, and may generatecontrol signals CNTL controlling the determined operation modes. Thecontrol logic 310 may generate a sequence of control signals CNTLdepending upon the operation modes.

The control logic 310 may include a mode register 312 and a refreshcontrol logic 314. Although the control logic 310 is described, in thisembodiment, as including two components, the mode register 312 and therefresh control logic 314 to conceptually describe the inventiveconcept, the inventive concept is not limited thereto, and the controllogic 310 may include various other circuit components for controllingoperation modes of the memory device 120.

Various options, functions, and features according to the operationmodes of the memory device 120 may be programmed into the mode register312. The mode register 312 may be programmed by mode register set (MRS)commands, and may be programmed with user-defined variables. The moderegister 312 is divided into various fields depending upon functionsand/or operation modes, and contents of the mode register 312 may beupdated by re-executing power-up and/or MRS commands.

For example, the mode register 312 may store data for controlling aburst length, a read burst type, column access strobe (CAS) latency, atest mode, a data mask function, a write data bus inversion (DBI)function, a read DBI function, and the like. In addition, the moderegister 312 may store the low power mode exit latency time tXP_LPS thatis set to automatically exit the low power mode state 260 (FIG. 2 ).

The refresh control logic 314 may control the self-refresh operation,when the memory device 120 is in the self-refresh mode state 250 or thelow power mode state 260. The refresh control logic 314 may control theself-refresh mode state 250 to refresh the memory cell rows in responseto the self-refresh entry command SRE and the self-refresh exit commandSRX.

The refresh control logic 314 may control the low power mode state 260to refresh the memory cell rows in response to the low power state entrycommand LPSE. The refresh control logic 314 may control the memorydevice 120 to automatically exit the low power mode state 260 by the lowpower mode exit latency time tXP_LPS set in the mode register 312.

The refresh control logic 314 may receive the alarm signal ALRM2instructing exit from the low power mode state 260. The refresh controllogic 314 may control the memory device 120 to exit the low power modestate 260 by receiving the low power mode exit command LPSX after thelow power mode exit latency time tXP_LPS elapses from a time point ofreceiving the alarm signal ALRM2.

The refresh control logic 314 may receive the trigger signal TRIGinstructing transition from the low power mode state 260 to theself-refresh mode state 250. The refresh control logic 314 may controlthe memory device 120 to operate in the self-refresh mode state 250 inresponse to the trigger signal TRIG.

The refresh control logic 314 may receive an alarm signal ALRM1instructing exit from the self-refresh mode state 250. The refreshcontrol logic 314 may control the memory device 120 to exit theself-refresh mode state 250 by receiving the self-refresh exit commandSRX after the self-refresh exit latency time tXP elapses from a timepoint of receiving the alarm signal ALRM1. The self-refresh exit latencytime tXP may be set by standards for the memory device 120.

The memory cell array 320 may include DRAM memory cells, each of whichincludes one access transistor and one storage capacitor. The memorycells are arranged to form a matrix structure of rows and columns, andthe memory cells connected to each of the rows may constitute a memorycell row.

The first to fourth circuitries 330 to 360 are internal circuitries ofthe memory device 120, and are conceptually distinguished circuitriesaccording to the inventive concept. The first to fourth circuitries 330to 360 may be controlled by the control signals CNTL of the controllogic 310, and may be selectively enabled or disabled depending upon theoperation modes of the memory device 120.

For example, the first to fourth circuitries 330 to 360 may include asense amplifier circuit, a column gate, an input/output circuit, a rowdecoder, a column decoder, and the like, which are related to read andwrite operations of the memory cell array 320. The row decoder maydecode a row address, and the decoded row address may be provided to thememory cell array 320 and operate a word line selected from among aplurality of word lines connected to the memory cells. Data stored inthe memory cells connected to the selected word line may be sensed andamplified by the sense amplifier circuit. The column decoder may decodea column address, and the column gate may select bit lines connected tothe memory cells by performing column gating according to the decodedcolumn address. The input/output circuit may buffer and provide dataread from the memory cell array 320 to the data input/output buffer 309,or may buffer and provide data received through the data input/outputbuffer 309 to the memory cell array 320.

In addition, the first to fourth circuitries 330 to 360 may includevarious circuits, such as a data inversion circuit, which recovers databy inverting or non-inverting data received through a data bus and thedata input/output buffer 309 in response to an inversion control signal,a data mask circuit, which controls data received through the datainput/output buffer 309 not to be selectively written, and the like.

In this embodiment, it should be noted that circuits, which aresimultaneously enabled depending upon the operation modes of the memorydevice 120 described with reference to FIGS. 2, 5, and 9 , arecollectively referred to as each of the first to fourth circuitries 330to 360, for convenience.

For example, the first to fourth circuitries 330 to 360 may be circuitsenabled in the idle state 210, in the active mode state 220, and in therefresh mode state 230. The first to third circuitries 330 to 350 may becircuits enabled in the self-refresh mode state 250. The first andsecond circuitries 330 and 340 may be circuits enabled in the low powermode state 260. In the deep power down mode state 240, all of the firstto fourth circuitries 330 to 360 may be disabled.

FIG. 4 is a timing diagram of a memory device operating in a low powermode state, according to an exemplary embodiment. Low power mode entryand low power mode automatic exit will be described with reference toFIG. 4 . It should be noted that timing diagrams described in exemplaryembodiments of the inventive concept are not always shown in scale.

Referring to FIGS. 3 and 4 , the memory device 120 may receive a pair ofclock signals CK and CKB. A frequency of the pair of clock signals CKand CKB may be set to be relatively high. Thus, a command CMDsynchronized with the pair of clock signals CK and CKB may be inputthroughout two clock cycles (2*tCK), considering the high clockfrequency. Although synchronized with an edge of the pair of clocksignals CK and CKB, the command CMD will be actually shown as beingdelayed for a certain time period from the edge of the pair of clocksignals CK and CKB in the timing diagrams due to the high clockfrequency. The pair of clock signals CK and CKB will be collectivelyreferred to as the clock signal CK, for convenience.

The clock signal CK is received from a time point Ta. A rising edge ofthe clock signal CK is input at the time point Ta, and may also be inputat each of time points Tb, Tc, Td, Te, Tf, Tg, and Th. At the time pointTa, a device deselected (DES) command may be received. The DES commandmay be applied after the lapse of a certain time period, before theapplication of power voltage and reference voltages, the stabilizationof the clock signal CK, and the application of an executable command. Inthis embodiment, the memory device 120 is described as operating inresponse to the rising edge of the clock signal CK. According to anexemplary embodiment, the memory device 120 may operate in response to afalling edge of the clock signal CK.

At the time point Tb, the low power state entry command LPSE isreceived. The low power state entry command LPSE may be receivedthroughout two clock cycles (2*tCK) from the time point Tb to the timepoint Tc.

The memory device 120 may transit to the low power mode state 260 (FIG.2 ), for example, at the time point Td, in response to the low powerstate entry command LPSE. The memory device 120 before the low powermode state 260 may be in a normal mode state, in which all banks are inan idle state. In the low power mode state 260, the memory cell rows ofthe memory cell array 320 may be refreshed, like in the self-refreshmode state 250 (FIG. 2 ). In the low power mode state 260, the clocksignal CK may be disabled.

From the time point Te, the memory device 120 may automatically exit thelow power mode state 260. The time point Te may be determined by the lowpower mode exit latency time tXP_LPS set in the mode register 312.

After the low power mode exit latency time tXP_LPS elapses from the timepoint Te, the memory device 120 may receive a valid command. Forexample, from the time point Th, the memory device 120 may receive thevalid command.

The memory device 120 may exit the low power mode state 260 and thustransit to the normal mode state, in which all of the banks are in anidle state, for example, at the time point Tf.

At the time point Tg, the memory device 120 may receive the DES commandbefore receiving the valid command.

In FIG. 4 , a low power mode state time tLPS, for which the memorydevice 120 is in the low power mode state 260, may be determined as atime period from the time point Tc of receiving the low power stateentry command LPSE to the time point Te of automatically exiting the lowpower mode state.

Since an interval, during which the memory device 120 operates in thelow power mode state 260, is internally controlled by the memory device120, actual start and end time points may not be known. However, theinterval, during which the memory device 120 operates in the low powermode state 260, is associated with the low power mode state time tLPS,and thus, may be anticipated as an interval from the time point Td tothe time point Tf.

FIG. 5 illustrates a state diagram of a memory device according to anexemplary embodiment. FIG. 5 specifically illustrates a state diagram ofthe memory device 120 (FIG. 1 ) described with reference to FIG. 2 .

Referring to FIG. 5 , the idle state 210, the self-refresh mode state250, and the low power mode state 260 of the memory device 120 are thesame as described with reference to FIG. 2 . The memory device 120enters the self-refresh mode state 250 from the idle state 210 inresponse to the self-refresh entry command SRE, and exits theself-refresh mode state 250 in response to the self-refresh exit commandSRX.

The memory device 120 may transit from the self-refresh mode state 250to a self-refresh power down mode state 255 in response to the logic lowof the clock enable signal CKE. The memory device 120 may also transitfrom the idle state 210 to the self-refresh power down mode state 255 bya self-refresh power down command SRE-PD.

The self-refresh power down mode state 255 represents a power down stateby the clock enable signal CKE in a self-refresh state, in which thememory cell rows of the memory cell array 320 are refreshed. In theself-refresh power down mode state 255, the clock signal CK (FIG. 3 )may be disabled according to the logic low of the clock enable signalCKE. Thus, since the clock buffer 302 (FIG. 3 ) is disabled and theinternal clock signal ICK (FIG. 3 ) is disabled, the power consumptionin the self-refresh power down mode state 255 may be lower than that inthe self-refresh mode state 250.

The memory device 120 may transit from the self-refresh power down modestate 255 to the self-refresh mode state 250 in response to logic highof the clock enable signal CKE. The memory device 120 may exit theself-refresh power down mode state 255 and transit to the idle state 210by using the first alarm signal ALRM1 applied to a first pin PINA.

The first alarm signal ALRM1 is a signal provided so that there is noinfluence on the normal operation or the idle state of the memory device120 by controlling the memory device 120 to exit the self-refresh powerdown mode state 255 early enough. That is, the first alarm signal ALRM1is a signal controlling the memory device 120 to exit the self-refreshpower down mode state 255, and then, receive a first valid command. Forexample, the first alarm signal ALRM1 may be provided earlier as much asthe self-refresh exit latency time tXP than a time point at which theself-refresh exit command SRX is applied.

The first pin PINA may be one of a plurality of pins, to which signalsused for operations of the memory device 120 are applied. The first pinPINA may be a signal pin which is not used in the self-refresh powerdown mode state 255 of the memory device 120. For example, the first pinPINA may be one of a data inversion signal pin DBI and a data masksignal pin DM of the memory device 120.

The memory device 120 may transit from the idle state 210 or theself-refresh mode state 250 to the low power mode state 260 in responseto the low power state entry command LPSE.

In the low power mode state 260, the memory cell rows of the memory cellarray 320 may be refreshed, like in the self-refresh mode state 250 andthe self-refresh power down mode state 255. Since there are morecircuits disabled in the low power mode state 260 than in theself-refresh power down mode state 255, power consumption in the lowpower mode state 260 may be lower than that in the self-refresh powerdown mode state 255. The memory device 120 may transit from the lowpower mode state 260 to the self-refresh power down mode state 255 byusing the trigger signal TRIG applied to a second pin PINB.

The trigger signal TRIG is a signal to enable the memory device 120 tomore quickly exit the low power mode state 260. During the low powermode exit latency time tXP_LPS, circuits disabled in the low power modestate 260 may be enabled. The low power mode exit latency time tXP_LPSmay be longer than the self-refresh exit latency time tXP. Thus, thetrigger signal TRIG controls the memory device 120 to transit from thelow power mode state 260 to the self-refresh power down mode state 255,and thus, to exit the low power mode state 260 according to theself-refresh exit latency time tXP that is relatively short.

The second pin PINB may be one of the plurality of pins, to which thesignals used for operations of the memory device 120 are applied. Thesecond pin PINB may be a signal pin that is not used in the low powermode state 260. For example, the second pin PINB may be one of the datainversion signal pin DBI and the data mask signal pin DM of the memorydevice 120.

The memory device 120 may automatically exit the low power mode state260 according to the low power mode exit latency time tXP_LPS, which isset in the mode register 312, and may transit to the idle state 210. Inaddition, the memory device 120 may exit the low power mode state 260and transit to the idle state 210 by using the second alarm signal ALRM2applied to the third pin PINC.

The second alarm signal ALRM2 is a signal provided so that there is noinfluence on the normal operation or the idle state of the memory device120 by controlling the memory device 120 to exit the low power modestate 260 early enough. That is, the second alarm signal ALRM2 is asignal controlling the memory device 120 to exit the low power modestate 260, and then, receive a first valid command. For example, thesecond alarm signal ALRM2 may be provided earlier as much as the lowpower mode exit latency time tXP_LPS than a time point at which the lowpower mode exit command LPSX is applied.

The third pin PINC may be one of the plurality of pins, to which thesignals used for operations of the memory device 120 are applied. Thethird pin PINC may be a signal pin that is not used in the low powermode state 260. For example, the third pin PINC may be one of the datainversion signal pin DBI and the data mask signal pin DM of the memorydevice 120.

FIG. 6 is a timing diagram of a memory device operating in theself-refresh power down mode of FIG. 5 , according to an exemplaryembodiment.

Referring to FIGS. 5 and 6 , at a time point T_(S1), the self-refreshentry command SRE is received. The self-refresh entry command SRE may bereceived throughout two clock cycles (2*tCK) from the time point T_(S1)to a time point T_(S2). At the time point T_(S2), no-operation NOP maybe illustrated.

At a time point T_(S3), as the clock enable signal CKE transits to logiclow, the memory device 120 may transit to the self-refresh power downmode state 255. Here, the clock signal CK may be disabled during a logiclow interval of the clock enable signal CKE. During the logic lowinterval of the clock enable signal CKE, the clock buffer 302 (FIG. 3 )may be disabled, and thus, the clock signal CK may be disabled.

At a time point T_(S4), the clock enable signal CKE transits to logichigh. The time point T_(S4) may be set based on the self-refresh exitlatency time tXP which is before a time point when the self-refresh exitcommand SRX is applied.

After the self-refresh exit latency time tXP elapses from the time pointT_(S4), at a time point T_(S5), the self-refresh exit command SRX isreceived. The self-refresh exit command SRX may be received throughouttwo clock cycles (2*tCK) from the time point T_(S5) to a time pointT_(S6).

At a time point T_(S7), the memory device receives a valid command. Thevalid command may be received throughout two clock cycles (2*tCK) fromthe time point T_(S7) to a time point T_(S8). Before receiving the validcommand, the memory device 120 may receive a DES command.

In FIG. 6 , a self-refresh time tSR, during which the memory device 120performs self-refresh, may be determined as a time period from the timepoint T_(S2) of the self-refresh entry command SRE to the time pointT_(S6) of the self-refresh exit command SRX. The self-refresh time tSRmay be set as a minimum time period (tSR(min)) by standards. Delay timetXSR from the time point T_(S6) of the self-refresh exit command SRX tothe time point T_(S8) of receiving the valid command may also be set asa minimum time period (tXSR (min)) by the standards.

Since an interval, during which the memory device 120 operates in theself-refresh power down mode state 255, is internally controlled by thememory device 120, actual start and end time points may not be known.However, the interval, for which the memory device 120 operates in theself-refresh power down mode state 255, may be anticipated as a timeperiod from the time point T_(S3), at which the clock enable signal CKEtransits to logic low, to the time point T_(S7) of receiving the validcommand.

FIGS. 7 and 8 are timing diagrams of a memory device operating in thelow power mode state of FIG. 5 . FIG. 7 illustrates a timing diagram, inwhich the memory device 120 transits from the low power mode state 260to the idle state 210, and FIG. 8 illustrates a timing diagram, in whichthe memory device 120 transits from the low power mode state 260 to theself-refresh power down mode state 255.

Referring to FIGS. 5 and 7 , at a time point T_(L1), the low power stateentry command LPSE is received. The low power state entry command LPSEmay be received throughout two clock cycles (2*tCK) from the time pointT_(L1) to a time point T_(L2). For example, the memory device 120 maytransit to the low power mode state 260 at a time point T_(L3) inresponse to the low power state entry command LPSE.

At a time point T_(L4), the third pin PINC of the memory device 120receives the second alarm signal ALRM2. The time point T_(L4) may be setbased on the low power mode exit latency time tXP_LPS which is before atime point when the low power state entry command LPSE is applied.

For example, the third pin PINC is a signal pin that is not used in thelow power mode state 260 of the memory device 120, and may be one of thedata inversion signal pin DBI and the data mask signal pin DM. Thesecond alarm signal ALRM2 may be provided so that there is no influenceon the normal operation or the idle state of the memory device 120 bycontrolling the memory device 120 to exit the low power mode state 260early enough.

After the low power mode exit latency time tXP_LPS elapses from the timepoint T_(L4), at a time point T_(L5), the low power mode exit commandLPSX is received. The low power mode exit command LPSX may be receivedthroughout two clock cycles (2*tCK) from the time point T_(L5) to a timepoint T_(L6).

At a time point T_(L7), the memory device 120 receives a valid command.The valid command may be received throughout two clock cycles (2*tCK)from the time point T_(L7) to a time point T_(L8). Before receiving thevalid command, the memory device 120 may receive a DES command.

In FIG. 7 , the low power mode state time tLPS, during which the memorydevice 120 is in the low power mode state 260, may be determined as atime period from the time point T_(L2) of receiving the low power stateentry command LPSE to the time point T_(L6) of the low power mode exitcommand LPSX. The low power mode state time tLPS may be set as a minimumtime period (tLPS(min)) by the standards. Delay time tXSR LPS from thetime point T_(L6) of receiving the low power mode exit command LPSX tothe time point T_(L8) of receiving the valid command may also be set asa minimum time period (tXSR LPS(min)) by the standards.

Since an interval, during which the memory device 120 operates in thelow power mode state 260, is internally controlled by the memory device120, actual start and end time points may not be known. However, theinterval, during which the memory device 120 operates in the low powermode state 260, is associated with the low power mode state time tLPS,and thus, may be anticipated as, for example, an interval from the timepoint T_(L3) of entering the low power mode state 260 to a time point ofreceiving the DES command before the reception of the valid command.

Referring to FIGS. 5 and 8 , at the time point T_(L1), the low powerstate entry command LPSE is received. The low power state entry commandLPSE may be received throughout two clock cycles (2*tCK) from the timepoint T_(L1) to the time point T_(L2).

The memory device 120 may transit to the low power mode state 260, forexample, at the time point T_(L3), in response to the low power stateentry command LPSE.

At a time point T_(LS0), the second pin PINB of the memory device 120receives the trigger signal TRIG. The trigger signal TRIG may beprovided for the memory device 120 to more quickly exit the low powermode state 260. By the trigger signal TRIG, the memory device 120 maytransit from the low power mode state 260 to the self-refresh power downmode state 255. The second pin PINB is a signal pin that is not used inthe low power mode state 260 of the memory device 120, and may be one ofthe data inversion signal pin DBI and the data mask signal pin DM.

At a time point T_(LS4), the first pin PINA of the memory device 120receives the first alarm signal ALRM1. The time point T_(LS4) may be setbased on the self-refresh exit latency time tXP which is before a timepoint when the self-refresh exit command SRX is applied. The first pinPINA is a signal pin that is not used in the self-refresh power downmode state 255 of the memory device 120, and may be one of the datainversion signal pin DBI and the data mask signal pin DM. The firstalarm signal ALRM1 may be provided so that there is no influence on thenormal operation or the idle state of the memory device 120 bycontrolling the memory device 120 to exit the self-refresh power downmode state 255 early enough.

After the self-refresh exit latency time tXP elapses from the time pointT_(LS4), at a time point T_(LS5), the self-refresh exit command SRX isreceived. The self-refresh exit command SRX may be received throughouttwo clock cycles (2*tCK) from the time point T_(LS5) to a time pointT_(LS6).

At a time point T_(LS7), the memory device 120 receives a valid command.The valid command may be received throughout two clock cycles (2*tCK)from the time point T_(LS7) to a time point T_(LS8). Before receivingthe valid command, the memory device 120 may receive a DES command.

In FIG. 8 , the low power mode state time tLPS, during which the memorydevice 120 is in the low power mode state 260, may be determined as atime period from the time point T_(L2) of receiving the low power stateentry command LPSE to the time point T_(LS0) of receiving the triggersignal TRIG. The self-refresh time tSR, during which the memory device120 performs self-refresh, may be determined as a time period from thetime point T_(LS0) of receiving the trigger signal TRIG to the timepoint T_(LS6) of receiving the self-refresh exit command SRX.

Operations of the memory device 120 in the low power mode state 260 maybe performed according to timing parameters set in the standards. By thestandards, the low power mode time tLPS may be set as a minimum timeperiod (tLPS(min)), and the self-refresh time tSR may also be set as aminimum time period (tSR(min)). The delay time tXSR from the time pointT_(LS6) of receiving the self-refresh exit command SRX to the time pointT_(LS8) of receiving the valid command may also be set as a minimum timeperiod (tXSR (min)) by the standards.

After transiting from the low power mode state 260 to the self-refreshpower down mode state 255 by the trigger signal TRIG, the memory device120 according to this embodiment may exit the low power mode state 260according to the self-refresh exit latency time tXP that is relativelyshort.

FIG. 9 illustrates an example low power state diagram of a memorydevice, according to an exemplary embodiment. FIG. 9 specificallyillustrates the low power mode state of the memory device 120 (FIG. 1 )described with reference to FIGS. 2 and 5 .

Referring to FIG. 9 , the memory device 120 may be in one of a pluralityof low power mode states 910, 920, and 930. The memory device 120 mayenter a first low power mode state 910 from the idle state 210 inresponse to a first low power state entry command LPSE1. The memorydevice 120 may enter a second low power mode state 920 from the idlestate 210 in response to a second low power state entry command LPSE2,and may enter an n-th low power mode state 930 from the idle state 210in response to an n-th low power state entry command LPSEn.

Among the first to n-th low power mode states 910, 920, and 930, a stateallowing the lowest power consumption is assumed to be the n-th lowpower mode state 930. Previously, in the descriptions with reference toFIG. 3 , the first and second circuitries 330 and 340 among the first tofourth circuitries 330 to 360 have been described as being enabled inthe low power mode state 260.

For example, the first and second circuitries 330 and 340 may be enabledin the first low power mode state 910. In the second low power state920, the first circuitry 330 may be enabled, and the second circuitry340 may be disabled. In the n-th low power mode state 930, all of thefirst and second circuitries 330 and 340 may be disabled.

The memory device 120 may automatically exit each of the first to n-thlow power mode states 910, 920, and 930 by using the low power mode exitlatency time tXP_LPS, and thus, may transit to the idle state 210.

For example, in the first low power mode state 910, before a validcommand is applied to the memory device 120, first low power mode exitlatency time tXP_LPS1 may be required. In the second low power modestate 920, before a valid command is applied, second low power mode exitlatency time tXP_LPS2 may be required. The second low power mode exitlatency time tXP_LPS2 may be a time period taken to enable the secondcircuitry 340 that is disabled. In the n-th low power mode state 930,before a valid command is applied, n-th low power mode exit latency timetXP_LPSn, which is taken to enable the first and second circuitries 330and 340 that are disabled, may be required.

The n-th low power mode exit latency time tXP_LPSn will be relativelylonger than the second low power mode exit latency time tXP_LPS2.Likewise, the second low power mode exit latency time tXP_LPS2 will berelatively longer than the first low power mode exit latency timetXP_LPS1. The first to n-th low power mode exit latency times tXP_LPS1to tXP_LPSn may be set in the mode register 312.

FIG. 10 illustrates an example mode register setting low power mode exitlatency times, according to an exemplary embodiment. The mode register312 of FIG. 10 is used to program various functions, features, and modesof the memory device, and FIG. 10 illustrates bit allocation accordingto a low power mode.

Referring to FIG. 10 , when an MRS command is issued, the mode register312 may be programmed with bit values provided as command/addresssignals (CA[0:n]). For example, a CAO bit is used for setting automaticexit from a low power mode state. If a value of “0” is programmed intothe CAO bit, the automatic exit from the low power mode state isdisabled. If a value of “1” is programmed into the CAO bit, theautomatic exit from the low power mode state is enabled.

The low power mode exit latency time tXP_LPS may be set by, for example,3-bit CA[3:1] bits. If a value of “111” is programmed into the CA[3:1]bits, the first low power mode exit latency time tXP_LPS1 may be set; ifa value of “001” is programmed into the CA[3:1] bits, the second lowpower mode exit latency time tXP_LPS2 may be set; and if a value of“111” is programmed into the CA[3:1] bits, the n-th low power mode exitlatency time tXP_LPSn may be set. The n-th low power mode exit latencytime tXP_LPSn will be set as a longer time period than the first andsecond low power mode exit latency times tXP_LPS1 and tXP_LPS2.

FIG. 11 is a block diagram of an example mobile device, to which amemory device having a plurality of low power states is applied,according to an exemplary embodiment. The mobile device may be a mobilephone or a smart phone.

Referring to FIG. 11 , a mobile device 1100 includes a global system formobile communication (GSM) block 1110, a near field communication (NFC)transceiver 1120, an input/output block 1130, an application block 1140,a memory 1150, and a display 1160. In FIG. 11 , the components/blocks ofthe mobile device 1100 are shown by way of example. The mobile device1100 may include more components/blocks or less components/blocks. Inaddition, although GSM technology is shown as being used in thisembodiment, the mobile device 1100 may be realized by using othertechnologies such as code division multiple access. The blocks of FIG.11 will be realized in the form of an integrated circuit.

The GSM block 1110 is connected to an antenna 1111, and may operate toprovide wireless phone operations in a manner known in the art. The GSMblock 1110 includes a receiver and a transmitter therein to performreception and transmission operations.

The NFC transceiver 1120 may be configured to transmit and receive NFCsignals by using inductive coupling, for wireless communication. The NFCtransceiver 1120 may provide the NFC signals to an NFC antenna matchingnetwork system 1121, and the NFC antenna matching network system 1121may transmit the NFC signals by inductive coupling.

The NFC antenna matching network system 1121 may receive NFC signalsprovided by other NFC devices, and may provide the received NFC signalsto the NFC transceiver 1120. The transmission and reception of the NFCsignals by the NFC transceiver 1120 may be performed in a time divisionmanner. The NFC transceiver 1120 may operate in accordance withregulations, which are described in NFC interface and protocol-1(NFCIP-1) and NFC interface and protocol-2 (NFCIP-2) and arestandardized in ECMA-340, ISO/IEC 18092, ETSI TS 102 190, ISO 21481,ECMA 352, ETSI TS 102 312, and the like.

The application block 1140 may include hardware circuits, for example,one or more processors, and may operate to provide various userapplications provided by the mobile device 1100. The user applicationsmay include voice call operations, data transmission, data swap, and thelike. The application block 1140 may provide operation features of theGSM block 1110 and/or the NFC transceiver 1120 by operating inconjunction with the GSM block 1110 and/or the NFC transceiver 1120. Inaddition, the application block 1140 may include a program for mobilepoint of sales (POS). Such a program may provide credit card purchasingand payment functions by using a mobile phone, that is, a smart phone.

The display 1160 may display images in response to display signalsreceived from the application block 1140. The images are provided by theapplication block 1140 or generated by a camera embedded in the mobiledevice 1100. The display 1160 may include a frame buffer therein for thetemporary storage of pixel values, and may be configured as a displayscreen in conjunction with associated control circuits.

The input/output block 1130 provides an input function to a user andprovides output to be received through the application block 1140.

The memory 1150 may store program (instructions) and/or data to be usedby the application block 1140, and may be realized as random accessmemory (RAM), read-only memory (ROM), flash memory, or the like. Thus,the memory 1150 may include volatile and non-volatile storage devices.For example, the memory 1500 may correspond to the memory device 120described with reference to FIGS. 1 to 10 .

The memory 1150 may enter a low power mode state, in which memory cellrows are refreshed, in response to the low power state entry commandLPSE. The memory 1150 may automatically exit the low power mode stateaccording to the low power mode exit latency time tXP_LPS stored in amode register. The memory 1150 may receive the alarm signal ALRM2instructing exit from the low power mode state, and may exit the lowpower mode state by receiving the low power mode exit command LPSX afterthe low power mode exit latency time tXP_LPS elapses from a time pointof receiving the alarm signal ALRM2. The memory 1150 may receive thetrigger signal TRIG instructing transition from the low power mode stateto a self-refresh mode state, and may operate in the self-refresh modestate in response to the trigger signal TRIG. In addition, the memory1150 may receive the alarm signal ALRM1 instructing exit from theself-refresh mode state, and may exit the self-refresh mode state byreceiving the self-refresh exit command SRX after the self-refresh exitlatency time tXP elapses from a time point of receiving the alarm signalALRM1.

FIG. 12 illustrates an operation concept of a mobile device and acommunication system, in which a memory device having a plurality of lowpower states is mounted, according to an exemplary embodiment.

Referring to FIG. 12 , a communication system 1200 includes a basestation 1210 and a plurality of communication devices 1221 and 1222within the cell coverage of the base station 1210. The communicationdevices 1221 and 1222 may refer to transmission terminals transmittingvarious types of information, and may refer to reception terminalsreceiving various types of information. In addition, the communicationdevices 1221 and 1222 may correspond to transceivers performing both oftransmission and reception functions. In the following embodiments, eachof the communication devices 1221 and 1222 will be referred to as aterminal, and may be the mobile device 1100 of FIG. 11 .

The base station 1210 may correspond to a Node B, an eNode B (eNB), abase station, an access point (AP), or the like, and may be defined as aconcept collectively referring to arbitrary nodes communicating with aterminal. In addition, each of the terminals 1221 and 1222 may bedefined as a concept collectively referring to mobile and stationaryuser terminals, such as user equipment (UE), a mobile station (MS), anadvanced mobile station (AMS), and the like.

The terminals 1221 and 1222 may operate in a cellular communication mode(or relay communication mode) in which the base station 1210 performsrelay. In the cellular communication mode, when a first terminal 1221transmits data to a second terminal 1222, the first terminal 1221 maytransmit the data to the base station 1210 through an uplink to the basestation 1210, and the base station 1210 may transmit the data to thesecond terminal 1222 through a downlink to the second terminal 1222.

In the cellular communication mode, a position measuring service forfinding out positions of the first and second terminals 1221 and 1222may be provided. The positions of the first and second terminals 1221and 1222 may be found out by GPS receivers in the first and secondterminals 1221 and 1222. For example, the positions of the first andsecond terminals 1221 and 1222 may be found out by special signalscyclically sent from the base station 1210 to the first and secondterminals 1221 and 1222.

The first and second terminals 1221 and 1222 need to be awake to respondthe signals cyclically sent from the base station 1210. For example,when idle states of the first and second terminals 1221 and 1222 becomelonger, memory devices 120 a and 120 b in the first and second terminals1221 and 1222 may be in a self-refresh mode state or a low power modestate, for power saving. In this case, the memory devices 120 a and 120b may be required to exit the self-refresh mode state or the low powermode state before receiving the cyclical signals sent from the basestation 1210.

The memory devices 120 a and 120 b may perform self refresh exit in theself refresh mode state by using the first alarm signal ALRM1, and mayperform low power mode exit in the low power mode state by using thesecond alarm signal ALRM2. The memory devices 120 a and 120 b mayreceive the first and second alarm signals ALRM1 and ALRM2 so as to exitthe self-refresh mode state and the low power mode state before thecyclical signals sent from the base station 1210 are received. Thus, thememory devices 120 a and 120 b may stably operate without influence onthe normal operation or idle state of the memory devices 120 a and 120b.

The operations or steps of the methods or algorithms described above canbe embodied as computer readable codes on a computer readable recordingmedium, or to be transmitted through a transmission medium. The computerreadable recording medium is any data storage device that can store datawhich can be thereafter read by a computer system. Examples of thecomputer readable recording medium include read-only memory (ROM),random-access memory (RAM), compact disc (CD)-ROM, digital versatiledisc (DVD), magnetic tape, floppy disk, and optical data storage device,not being limited thereto. The transmission medium can include carrierwaves transmitted through the Internet or various types of communicationchannel. The computer readable recording medium can also be distributedover network coupled computer systems so that the computer readable codeis stored and executed in a distributed fashion.

At least one of the components, elements, modules or units representedby a block as illustrated in FIGS. 1 and 3 may be embodied as variousnumbers of hardware, software and/or firmware structures that executerespective functions described above, according to an exemplaryembodiment. For example, at least one of these components, elements,modules or units may use a direct circuit structure, such as a memory, aprocessor, a logic circuit, a look-up table, etc. that may execute therespective functions through controls of one or more microprocessors orother control apparatuses. Also, at least one of these components,elements, modules or units may be specifically embodied by a module, aprogram, or a part of code, which contains one or more executableinstructions for performing specified logic functions, and executed byone or more microprocessors or other control apparatuses. Also, at leastone of these components, elements, modules or units may further includeor may be implemented by a processor such as a central processing unit(CPU) that performs the respective functions, a microprocessor, or thelike. Two or more of these components, elements, modules or units may becombined into one single component, element, module or unit whichperforms all operations or functions of the combined two or morecomponents, elements, modules or units. Also, at least part of functionsof at least one of these components, elements, modules or units may beperformed by another of these components, elements, modules or units.Further, although a bus is not illustrated in the above block diagrams,communication between the components, elements, modules or units may beperformed through the bus. Functional aspects of the above exemplaryembodiments may be implemented in algorithms that execute on one or moreprocessors. Furthermore, the components, elements, modules or unitsrepresented by a block or processing steps may employ any number ofrelated art techniques for electronics configuration, signal processingand/or control, data processing and the like.

While the inventive concept has been particularly shown and describedwith reference to the exemplary embodiments thereof, it will beunderstood that various changes in form and details may be made thereinwithout departing from the spirit and scope of the following claims.

What is claimed is:
 1. A method of controlling a power state of a memorydevice, the method comprising: entering an idle state, in which nocommand is issued to the memory device; transitioning from the idlestate to a low power mode in response to a low power state entrycommand, in which memory cell rows of the memory device areself-refreshed in the low power mode, operations of the memory device inthe low power mode are performed according to a minimum low power modestate time; and transitioning from the low power mode to a self-refreshpower down mode in response to a trigger signal, in which the memorycell rows of the memory device are continuously self-refreshed in theself-refresh power down mode and the self-refresh power down modedisables more circuits than those disabled in a self-refresh mode,wherein the low power mode has lower power consumption than theself-refresh mode and the self-refresh power down mode, and theself-refresh power down mode has lower power consumption than theself-refresh mode.
 2. The method of claim 1, further comprising:receiving the trigger signal through one of a plurality of pins of thememory device, to which signals used for operations of the memory deviceare applied.
 3. The method of claim 1, further comprising: transitioningfrom the self-refresh power down mode to the self-refresh mode inresponse to a first signal, in which the memory cell rows of the memorydevice are continuously self-refreshed in the self-refresh mode; andtransitioning from the self-refresh mode to the idle state in responseto a self-refresh exit command; and operating a valid command after anexit from the self-refresh mode, wherein the valid command is issuedafter a minimum delay time elapses from a time point of the self-refreshexit command.
 4. The method of claim 1, further comprising:transitioning from the self-refresh mode to the low power mode inresponse to a mode entry command.
 5. The method of claim 4, wherein thelow power state entry command is same as the mode entry command.
 6. Amethod of controlling a power state of a memory device, the methodcomprising: entering an idle state, in which no command is issued to thememory device; transitioning from the idle state to a low power mode inresponse to a low power state entry command, in which memory cell rowsof the memory device are self-refreshed in the low power mode,operations of the memory device in the low power mode are performedaccording to a minimum low power mode state time; transitioning from thelow power mode to a self-refresh power down mode in response to atrigger signal, in which the memory cell rows of the memory device arecontinuously self-refreshed in the self-refresh power down mode;transitioning from the self-refresh power down mode to a self-refreshmode in response to a first signal, in which the memory cell rows of thememory device are continuously self-refreshed in the self-refresh mode;and transitioning from the self-refresh mode to the idle state inresponse to a self-refresh exit command, wherein the low power mode haslower power consumption than the self-refresh mode and the self-refreshpower down mode, and the self-refresh power down mode has lower powerconsumption than the self-refresh mode.
 7. The method of claim 6,further comprising: receiving the trigger signal through one of aplurality of pins of the memory device, to which signals used foroperations of the memory device are applied.
 8. The method of claim 6,further comprising: transitioning from the self-refresh mode to theself-refresh power down mode in response to a second signal.
 9. Themethod of claim 6, further comprising: transitioning from the low powermode to the idle state in response to a low power mode exit command. 10.The method of claim 6, further comprising: transitioning from the idlestate to the self-refresh mode in response to a self-refresh entrycommand.
 11. The method of claim 6, further comprising: transitioningfrom the idle state to the self-refresh power down mode in response to aself-refresh power down command.
 12. The method of claim 6, furthercomprising: transitioning from the self-refresh mode to the low powermode in response to a mode entry command.
 13. The method of claim 12,wherein the low power state entry command is same as the mode entrycommand.
 14. A method of operating a memory device, the methodcomprising: transitioning from an idle mode to a low power mode inresponse to a low power state entry command, operations of the memorydevice in the low power mode are performed according to a minimum lowpower mode state time; transitioning from the low power mode to aself-refresh power down mode in response to a first signal;transitioning from the self-refresh power down mode to a self-refreshmode in response to a second signal; transitioning from the self-refreshmode to the idle mode in response to a self-refresh exit command; andtransitioning from the self-refresh mode to the low power mode inresponse to the low power state entry command.
 15. The method of claim14, wherein memory cell rows of the memory device are automaticallyrefreshed by using an internal counter in the memory device in the lowpower mode and the self-refresh power down mode.
 16. The method of claim14, further comprising: transitioning from the idle mode to theself-refresh mode in response to a self-refresh mode entry command; andtransitioning from the self-refresh mode to the idle mode in response tothe self-refresh exit command, wherein memory cell rows of the memorydevice are automatically refreshed by using an internal counter in thememory device in the self-refresh mode.
 17. The method of claim 16,wherein power consumption in the low power mode is lower than in theself-refresh mode.
 18. The method of claim 14, wherein operations of thememory device in the low power mode are performed according to theminimum low power mode state time.
 19. The method of claim 14, furthercomprising: receiving a valid command after the self-refresh exitcommand, wherein the valid command is received after a minimum delaytime elapses from a time point of the self-refresh exit command.
 20. Themethod of claim 14, further comprising: transitioning from the idle modeto the self-refresh power down mode in response to a self-refresh powerdown command.